SI2316BDS features ? trenchfet ? power mosfet ? pwm optimized ? 100 % r g tested applications ? battery switch ? dc/dc converter product summary v ds (v) r ds(on) ( ) i d (a) a q g (typ) 30 0.050 at v gs = 10 v 4.5 3.16 nc 0.080 at v gs = 4.5 v 3.4 orderin g information: s i2 3 16bd s -t1-e 3 (le a d (p b )-free) g s d top view 2 3 to-2 3 6 ( s ot-2 3 ) 1 s i2 3 16d s (m6)* *m a rking code notes: a. based on t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 5 sec. d. maximum under steady state conditions is 130 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 4.5 a t c = 70 c 3.6 t a = 25 c 3.9 b, c t a = 70 c 3.13 b, c pulsed drain current i dm 20 continuous source-drain diode current t c = 25 c i s 1.39 t a = 25 c 1.04 b, c maximum power dissipation t c = 25 c p d 1.66 w t c = 70 c 1.06 t a = 25 c 1.25 b, c t a = 70 c 0.8 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, d 5 sec r thja 80 100 c/w maximum junction-to-foot (drain) steady state r thjf 60 75 rohs compliant product specification product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not subject to production testing. mosfet specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min typ max unit static drain-source breakdown voltage v ds v ds = 0 v, i d = 250 a 30 v v ds temperature coefficient v ds /t j i d = 250 a 23.92 mv/c v gs(th) temperature coefficient v gs(th) /t j 5.2 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 13v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a v ds = 30 v, v gs = 0 v, t j = 55 c 10 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 20 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 3.9 a 0.041 0.050 v gs = 4.5 v, i d = 3.3 a 0.064 0.080 forward transconductance a g fs v ds = 15v, i d = 3.9 a 6s dynamic b input capacitance c iss v ds = 15 v, v gs = 0 v, f = 1 mhz 350 pf output capacitance c oss 65 reverse transfer capacitance c rss 37 total gate charge q g v ds = 15 v, v gs = 10 v, i d = 3.9 a 6.35 9.6 nc v ds = 15 v, v gs = 4.5 v, i d = 3.9 a 3.16 4.8 gate-source charge q gs 1.56 gate-drain charge q gd 1.1 gate resistance r g f = 1 mhz 2.6 3.9 tu r n - o n d e l ay t i m e t d(on) v dd = 15 v, r l = 4.8 i d ? 3.13 a, v gen = 10 v, r g = 1 4.5 6.75 ns rise time t r 11 16.5 turn-off delay time t d(off) 12 18 fall time t f 710.5 tu r n - o n d e l ay t i m e t d(on) v dd = 15 v, r l = 6.25 i d = 2.4 a, v gen = 4.5 v, r g = 1 20 30 ns rise time t r 65 98 turn-off delay time t d(off) 11 17 fall time t f 23 35 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 1.39 a pulse diode forward current a i sm 20 body diode voltage v sd i s = 2.0 a 0.8 1.2 v body diode reverse recovery time t rr i f = 2.0 a, di/dt = 100 a/s, t j = 25 c 10 15 ns body diode reverse recovery charge q rr 46nc reverse recovery fall time t a 6.6 ns reverse recovery rise time t b 3.5 SI2316BDS product specification product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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